dmc3021lk4 Diodes, Inc., dmc3021lk4 Datasheet - Page 3

• Manufacturer Part Number: dmc3021lk4
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics N-CHANNEL – Q1
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMC3021LK4
Document number: DS35082 Rev. 1 - 2
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
30
25
20
15
10
5
0
0
I (A) @
V
D
GS
=10V
V , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
DS
Characteristic
0.5
I (A) @ V
D
1
GS
=4.5V
@T
I (A) @ V
I (A) @ V
I (A) @ V
I (A) @ V
D
D
D
D
1.5
c
= 25°C
GS
GS
GS
GS
=3.5V
=3.0V
=4.0V
=2.5V
Symbol
R
2
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
@T
3 of 10
A
= 25°C unless otherwise specified
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
15
10
5
0
17.4
19.0
Typ
751
121
110
1.5
8.5
0.7
1.5
2.2
2.5
6.6
6.3
14
18
0
9
3
-
-
-
V
DS
0.5
Ave V
= 5.0V
Fig. 2 Typical Transfer Characteristics
±100
V
Max
1.0
2.1
1.0
Ave V
21
32
GS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
1
, GATE-SOURCE VOLTAGE (V)
(V) @ 125°C
GS
1.5
(V) @ 150°C
Unit
mΩ
nC
nC
nC
nC
μA
nA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
2
2.5
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
DD
G
= 6A
= 6Ω, R
3
= 0V, I
=30V, V
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 5V, I
= 0V, I
= 10V, V
= 10V, V
= 10V, V
= 15V, V
Ave V
Ave V
Ave V
3.5
GS
Test Condition
DMC3021LK4
, I
D
D
S
L
GS
GS
D
D
GS
GS
= 7A
= 1A
= 1.8Ω, I
= 250μA
D
GS
GS
DS
GS
(V) @ 25°C
(V) @ -55°C
4
= 250μA
= 7A
(V) @ 85°C
DS
= 5.6A
= 0V
= 0V,
= 0V,f = 1.0MHz
= 15V,
= 10V,
© Diodes Incorporated
= 0V
4.5
D
= 6.7A
July 2011
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