si7456cdp Vishay, si7456cdp Datasheet - Page 4

• Manufacturer Part Number: si7456cdp
• Description: N-channel 100 V D-s Mosfet
• Manufacturer: Vishay

Si7456CDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.1
10
0
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
25
- Temperature (°C)
50
0.6
I
D
0.01
75
100
T
= 250 μA
0.1
10
J
0.8
Limited by R
0.1
1
= 25 °C
100
Safe Operating Area, Junction-to-Ambient
* V
GS
Single Pulse
I
1.0
D
T
> minimum V
125
A
= 5 mA
V
= 25 °C
DS(on)
DS
- Drain-to-Source Voltage (V)
150
1.2
*
1
GS
at which R
BVDSS Limited
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
200
160
120
is specified
80
40
0
0
0 .
0
0
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1
100
10 ms
1 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S10-0785-Rev. A, 05-Apr-10
6
Document Number: 65941
7
1
T
I
T
D
J
J
8
= 10 A
= 125 °C
= 25 °C
9
1
10
0