sup60n10-18p Vishay, sup60n10-18p Datasheet - Page 5

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sup60n10-18p

Manufacturer Part Number
sup60n10-18p
Description
N-channel 100-v D-s Mosfet
Manufacturer
Vishay
Datasheet
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
180
150
120
90
60
30
0
0
25
Power Derating, Junction-to-Case
D
T
50
C
is based on T
- Case Temperature (°C)
75
100
J(max.)
125
0.01
100
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Limited by R
0.1
10
1
0.1
150
* V
Single Pulse
T
C
GS
= 25 °C
DS(on)
> minimum V
175
V
1
DS
*
Safe Operating Area
- Drain-to-Source Voltage (V)
BVDSS Limited
GS
at which R
10
DS(on)
75
60
45
30
15
0
100
0
10 µs
100 µs
1 ms
10 ms, DC
is specified
25
1000
T
50
C
Current Derating*
- Case Temperature (°C)
75
SUP60N10-18P
Vishay Siliconix
100
125
www.vishay.com
150
175
5

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