sud50n04-09h Vishay, sud50n04-09h Datasheet
sud50n04-09h
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sud50n04-09h Summary of contents
Page 1
... DS(on) 0.009 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N04-09H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy Power Dissipation ...
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... SUD50N04-09H Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Drain-to-Source Voltage (V) DS Capacitance Document Number: 72669 S-71661-Rev. E, 06-Aug- ° °C 125 ° rss SUD50N04-09H Vishay Siliconix 100 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUD50N04-09H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Limited By Package 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature ...
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... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72669. Document Number: 72669 S-71661-Rev. E, 06-Aug- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50N04-09H Vishay Siliconix 1 10 100 www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...