bsc067n06ls3g Infineon Technologies Corporation, bsc067n06ls3g Datasheet - Page 7

• Manufacturer Part Number: bsc067n06ls3g
• Description: Optimostm3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
1
70
60
50
40
AV
0.1
-60
=f(T
); R
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
1
125 °C
20
t
T
AV
100 °C
j
10
60
[µs]
[°C]
100
25 °C
100
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
10
=50 A pulsed
g s
20
Q
Q
gate
g
Q
30
sw
[nC]
Q
BSC067N06LS3 G
g d
40
12 V
50
30 V
48 V
Q
g ate
2008-12-19
60