bsc060p03ns3eg Infineon Technologies Corporation, bsc060p03ns3eg Datasheet

bsc060p03ns3eg

Manufacturer Part Number

bsc060p03ns3eg

Description

Optimos P3 Power Transistor Power Mosfet

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BSC060P03NS3EG.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSC060P03NS3EG

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

BSC060P03NS3EG

Company:

H&T Electronics

Part Number:

BSC060P03NS3EG

Quantity:

5 000

Current page: 1 of 9
Download datasheet (296Kb)

Rev. 2.0

Type

BSC060P03NS3E G

Features

• single P-Channel in SuperSO8

• Qualified according JEDEC

• 150 °C operating temperature

• 100% Avalanche rated

• V

• ESD protected

• Pb-free; RoHS compliant, halogen free

• applications: battery management, load switching

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

OptiMOS

J-STD20 and JESD22

=25 V, specially suited for notebook applications

P3 Power-Transistor

Package

PG-TDSON-8

=25 °C, unless otherwise specified

for target applications

Symbol Conditions

Marking

060P3NSE

D,pulse

tot

, T

stg

JESD22-A114 HBM

page 1

=-50 A, R

=25 °C

=70 °C

=25 °C

Lead free

Yes

Product Summary

=25 Ω

DS(on),max

Halogen free

Yes

class 3 (> 4 kV)

-55 ... 150

55/150/56

Value

-82.0

-100

17.7

-200

BSC060P03NS3E G

149

260

±25

2.5

PG-TDSON-8

Packing

non dry

-100

6.0

-30

Unit

°C

mΩ

2009-04-02

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