bsc085n025s Infineon Technologies Corporation, bsc085n025s Datasheet
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bsc085n025s
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bsc085n025s Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC085N025S 8 PG-TDSON-8 Value Unit 140 120 mJ 6 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 2006-05-10 ...
Page 2
... GSS =4 =25 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC085N025S G Values Unit min. typ. max 2.4 K 1.2 1 0.1 1 µ 100 - 10 100 ...
Page 3
... oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC085N025S G Values Unit min. typ. max. - 1350 1800 pF - 518 689 - 4 4.6 6 2.2 2 ...
Page 4
... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µ µs 100 µ [V] DS page 4 BSC085N025S G _10 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 ...
Page 5
... V 10 3 Typ. forward transconductance g =f ° [V] GS page 5 BSC085N025S =25 ° 3 3 [A] D =25 ° [ 2006-05-10 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 BSC085N025S 250 µA 25 µA - 140 T [° °C, 98% 25 °C 150 °C 150 °C, 98% 0 0.5 1 1.5 [ 190 ...
Page 7
... AV 16 Gate charge waveforms s(th) Q g(th) 90 140 190 [°C] j page 7 BSC085N025S =25 A pulsed gate [nC] gate ate ...
Page 8
... Package Outline P-TDSON-8: Outline Footprint Dimensions in mm Rev. 0.94 PG-TDSON-8 page 8 BSC085N025S G 2006-05-10 ...
Page 9
... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 0.94 page 9 BSC085N025S G 2006-05-10 ...
Page 10
... Rev. 0.94 ° page 10 BSC085N025S G 2006-05-10 ...