bsc047n08ns3g Infineon Technologies Corporation, bsc047n08ns3g Datasheet - Page 3

• Manufacturer Part Number: bsc047n08ns3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.4
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
5)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
D
page 3
C
j
GS
DD
DD
GS
DD
GS
=25 A, R
=25 °C
V
=25 °C
di
=0 V, V
=40 V, V
=40 V, I
=0 to 10 V
=40 V, V
=0 V, I
R
=40 V, I
F
/dt =100 A/µs
F
G
DS
=50 A,
D
=1.6 Ω
GS
GS
=25 A,
F
=40 V,
=25A,
=10 V,
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3600
typ.
960
109
4.8
1.0
36
18
17
44
11
16
10
10
17
52
70
61
-
-
BSC047N08NS3 G
max.
4800
1300
100
400
1.2
69
93
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2008-10-16