bsc048n025s Infineon Technologies Corporation, bsc048n025s Datasheet
bsc048n025s
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bsc048n025s Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC048N025S 4 PG-TDSON-8 Value Unit 200 185 mJ 6 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 2006-05-10 ...
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... GSS =4 =30 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC048N025S G Values Unit min. typ. max K 1.2 1 0.1 1 µ 100 - 10 100 ...
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... oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC048N025S G Values Unit min. typ. max. - 2010 2670 pF - 769 1020 - 95 142 - 5 ...
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... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 BSC048N025S G _10 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 ...
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... 3 Typ. forward transconductance g =f 100 ° [V] GS page 5 BSC048N025S =25 ° 3.4 V 3 [A] D =25 ° [ 100 75 2006-05-10 ...
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... Forward characteristics of reverse diode I =f parameter Crss [V] DS page 6 BSC048N025S 350 µA 35 µA - 140 T [° 150 °C, 98% 25 °C 150 °C 25 °C, 98% 0 0.5 1 1.5 [ 190 ...
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... AV 16 Gate charge waveforms s(th) Q g(th) 90 140 190 [°C] j page 7 BSC048N025S =25 A pulsed gate [nC] gate ate ...
Page 8
... Package Outline P-TDSON-8: Outline Footprint Dimensions in mm Rev. 0.94 PG-TDSON-8 page 8 BSC048N025S G 2006-05-10 ...
Page 9
... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 0.94 page 9 BSC048N025S G 2006-05-10 ...
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... Rev. 0.94 ° page 10 BSC048N025S G 2006-05-10 ...