bsc042n03sg Infineon Technologies Corporation, bsc042n03sg Datasheet - Page 6

• Manufacturer Part Number: bsc042n03sg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.7
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
4
3
2
DS
=f(T
7
6
5
4
3
2
1
0
10000
1000
100
0
-60
); V
j
); I
GS
D
5
=0 V; f =1 MHz
-20
=50 A; V
10
20
98 %
GS
V
Coss
Ciss
=10 V
T
DS
Crss
15
j
60
[°C]
[V]
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
-1
-2
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
0.4
=V
DS
20
50 µA
0.8
150 °C
V
T
j
SD
60
[°C]
500 µA
[V]
25 °C
1.2
25°C, 98%
BSC042N03S G
100
150°C, 98%
1.6
140
2008-04-28
180
2