bsc072n025s Infineon Technologies Corporation, bsc072n025s Datasheet

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bsc072n025s

Manufacturer Part Number
bsc072n025s
Description
Optimos 2 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
bsc072n025sG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 0.94
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
• Logic level / N-channel
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSC072N025S G
®
2 Power-Transistor
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1
for target applications
product (FOM)
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
72N025S
stg
T
T
T
R
T
I
I
di /dt =200 A/µs,
T
T
T
R
D
D
page 1
C
C
A
C
j,max
C
A
thJA
=40 A, R
=40 A, V
thJA
=25 °C,
=25 °C,
=25 °C
=100 °C
=25 °C
=25 °C
=45 K/W
=45 K/W
=150 °C
3)
DS
GS
=24 V,
=25
Product Summary
V
R
I
2)
2)
D
DS
DS(on),max
-55 ... 150
55/150/56
Value
160
160
±20
2.8
40
40
15
60
PG-TDSON-8
6
BSC072N025S G
7.2
25
40
Unit
A
mJ
kV/µs
V
W
°C
V
m
A
2006-05-10

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