bsc094n03s Infineon Technologies Corporation, bsc094n03s Datasheet - Page 2

• Manufacturer Part Number: bsc094n03s
• Description: Optimos2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.01
1)
2)
connection. PCB is vertical in still air.
2)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
See figure 3
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=35 A
DS
page 2
=0 V, I
=V
=30 V, V
=30 V, V
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
D
, I
|R
D
2
D
=1 mA
D
=25 µA
(one layer, 70 µm thick) copper area for drain
D
DS(on)max
GS
GS
DS
=35 A
=30 A
=0 V,
=0 V,
=0 V
2)
,
min.
1.2
30
26
-
-
-
-
-
-
-
-
-
Values
11.2
typ.
1.6
0.1
7.8
10
10
53
1
-
-
-
-
BSC094N03S G
max.
100
100
2.4
9.4
62
45
14
2
1
-
-
-
2004-12-15
Unit
K/W
V
µA
nA
m
S