bsc035n04lsg Infineon Technologies Corporation, bsc035n04lsg Datasheet - Page 6

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bsc035n04lsg

Manufacturer Part Number
bsc035n04lsg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
DS
=f(T
6
5
4
3
2
1
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=50 A; V
98 %
10
20
GS
V
=10 V
T
DS
j
60
20
[°C]
Coss
Ciss
[V]
typ
Crss
100
30
140
180
page 6
40
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
=V
150 °C
0.5
DS
20
; I
D
=36 µA
V
T
SD
j
1.0
60
[°C]
[V]
25 °C
BSC035N04LS G
25 °C, 98%
100
1.5
140
150 °C, 98%
2007-12-05
180
2.0

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