bsc031n06ns3g Infineon Technologies Corporation, bsc031n06ns3g Datasheet - Page 7

• Manufacturer Part Number: bsc031n06ns3g
• Description: Optimostm3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev.2.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
70
65
60
55
50
45
40
1
AV
-60
=f(T
1
); R
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
125 °C
20
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=50 A pulsed
g s
20
40
Q
Q
gate
g
Q
[nC]
sw
Q
BSC031N06NS3 G
60
g d
12 V
80
48 V
Q
30 V
g ate
2009-02-02
100