bsc019n04nsg Infineon Technologies Corporation, bsc019n04nsg Datasheet
bsc019n04nsg
Available stocks
Related parts for bsc019n04nsg
bsc019n04nsg Summary of contents
Page 1
OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel • Normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...
Page 2
Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
Page 4
Power dissipation P =f(T ) tot C 140 120 100 Safe operating area I =f =25 ° parameter limited ...
Page 5
Typ. output characteristics I =f =25 ° parameter 400 300 200 100 Typ. transfer characteristics I =f |>2 ...
Page 6
Drain-source on-state resistance =10 V DS(on 3 1.5 1 0.5 0 -60 - Typ. capacitances C =f ...
Page 7
Avalanche characteristics =25 Ω parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...
Page 8
Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.0 PG-TDSON-8 page 8 BSC019N04NS G 2007-12-06 ...
Page 9
Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.0 page 9 BSC019N04NS G 2007-12-06 ...
Page 10
Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...