bsc014n03msg Infineon Technologies Corporation, bsc014n03msg Datasheet
bsc014n03msg
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bsc014n03msg Summary of contents
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OptiMOS ® 3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOM for High Frequency SMPS SW • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) • Excellent gate charge x ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 150 120 Safe operating area I =f =25 ° parameter limited by on-state ...
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Typ. output characteristics I =f =25 ° parameter 300 250 10 V 200 150 100 Typ. transfer characteristics I =f ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.2 PG-TDSON-8 page 8 BSC014N03MS G 2008-11-14 ...
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Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.2 page 9 BSC014N03MS G 2008-11-14 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...