si4882dy Vishay, si4882dy Datasheet
si4882dy
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si4882dy Summary of contents
Page 1
... 25_C 70_C stg Symbol sec R R thJA thJA Steady State Steady State R thJF Si4882DY Vishay Siliconix Limit Unit "25 "11 " "50 2.3 2 1.6 –55 to 150 _C Typical Maximum Unit ...
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... Si4882DY Vishay Siliconix MOSFET SPECIFICATIONS (T J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... V GS 400 On-Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 On-Resistance vs. Gate-to-Source Voltage 0.10 0.08 0.06 0. 25_C J 0.02 0 1.0 1.2 0 Si4882DY Vishay Siliconix Capacitance C iss C oss C rss – Drain-to-Source Voltage ( – 100 125 150 T – ...
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... Si4882DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0 250 mA D –0.0 –0.2 –0.4 –0.6 –0.8 –1.0 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...