si4837dy Vishay, si4837dy Datasheet

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si4837dy

Manufacturer Part Number
si4837dy
Description
P-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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Part Number:
si4837dy-T1-E3
Manufacturer:
VISHAY
Quantity:
12 942
Notes
a.
b.
Document Number: 71662
S-04246—Rev. A, 16-Jul-01
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
V
V
Surface Mounted on FR4 Board.
t v 10 sec.
DS
KA
–30
30
(V)
(V)
P-Channel 30-V (D-S) MOSFET with Schottky Diode
Diode Forward Voltage
G
K
S
S
0.030 @ V
0.020 @ V
0.53 V @ 3 A
r
1
2
3
4
J
DS(on)
= 150_C) (MOSFET)
Parameter
V
f
GS
GS
(V)
Top View
_
SO-8
(W)
= –4.5 V
= –10 V
a, b
a, b
8
7
6
5
a, b
a, b
A
D
D
D
a, b
I
I
D
F
6.8
8.3
T
T
T
T
T
T
A
(A)
(A)
3
A
A
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
Symbol
T
J
V
V
G
V
I
I
P
, T
DM
FM
I
I
I
GS
DS
KA
D
S
F
D
stg
P-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D LITTLE FOOT Plust Schottky
APPLICATIONS
D Battery Charging
D DC/DC Converters
S
D
– Asynchronous Buck
– Voltage Inverter
10 Sec
–8.3
–6.6
–2.3
0.98
2.5
1.6
1.5
–55 to 150
"20
–30
–40
30
20
3
K
A
Steady State
Vishay Siliconix
–1.25
–6.1
–4.9
1.38
0.88
0.64
1.0
Si4837DY
www.vishay.com
Unit
_C
W
V
V
A
1

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si4837dy Summary of contents

Page 1

... 25_C 70_C 25_C 70_C stg Si4837DY Vishay Siliconix – Asynchronous Buck – Voltage Inverter Sec Steady State –30 30 "20 –6.1 –8.3 –6.6 –4.9 –40 –2.3 –1. 2.5 1.38 1.6 0.88 1.5 1.0 ...

Page 2

... Si4837DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient ( sec) Maximum Junction-to-Ambient (t = steady state) Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board sec. MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 71662 S-04246—Rev. A, 16-Jul-01 New Product Si4837DY Vishay Siliconix Transfer Characteristics 125_C C 10 25_C –55_C – Gate-to-Source Voltage (V) GS ...

Page 4

... Si4837DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.00 0.25 0.50 0.75 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Square Wave Pulse Duration (sec) 0.1 100 125 150 Capacitance 500 400 300 200 100 – Reverse Voltage (V KA Si4837DY Vishay Siliconix MOSFET – SCHOTTKY Forward Voltage Drop 150_C 25_C J 0 0.2 0.4 0.6 V – Forward Voltage Drop (V) ...

Page 6

... Si4837DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – www.vishay.com 6 New Product Normalized Thermal Transient Impedance, Junction-to-Ambient –2 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot – ...

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