bsc196n10nsg Infineon Technologies Corporation, bsc196n10nsg Datasheet - Page 5
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bsc196n10nsg
Manufacturer Part Number
bsc196n10nsg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC196N10NSG.pdf
(10 pages)
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Rev. 1.04
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
80
60
40
20
160
120
80
40
0
DS
GS
0
0
); T
0
); |V
j
=25 °C
j
GS
DS
10 V
|>2|I
1
2
D
|R
7 V
4.5 V
6 V
DS(on)max
5.5 V
5 V
2
V
V
DS
150 °C
GS
4
[V]
[V]
3
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
80
60
40
20
50
45
40
35
30
25
20
15
10
0
D
=f(I
5
0
); T
0
0
D
j
); T
=25 °C
5 V
GS
j
=25 °C
20
20
5.5 V
40
I
I
D
D
40
[A]
[A]
60
BSC196N10NS G
6 V
7 V
60
80
10 V
2008-05-08
100
80