bsc159n10lsfg Infineon Technologies Corporation, bsc159n10lsfg Datasheet - Page 2
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bsc159n10lsfg
Manufacturer Part Number
bsc159n10lsfg
Description
Optimos 2 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC159N10LSFG.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC159N10LSFG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.07
1)
2)
connection. PCB is vertical in still air.
3)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
see figure 3
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
bottom
top
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=50 A
DS
=V
=100 V, V
=100 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=72 µA
D
DS
DS(on)max
=50 A
=25 A
GS
GS
=0 V
=0 V,
=0 V,
2)
,
min.
100
1.2
30
-
-
-
-
-
-
-
-
-
-
Values
1.85
0.01
17.2
12.2
typ.
10
59
1
1
-
-
-
-
-
BSC159N10LSF G
max.
21.5
15.9
100
100
1.1
2.4
18
62
50
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-10-20