sup90n04 Vishay, sup90n04 Datasheet - Page 4

• Manufacturer Part Number: sup90n04
• Description: N-channel 40 V D-s Mosfet
• Manufacturer: Vishay

SUP90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
2000
8000
6000
4000
100
2.0
1.7
1.4
1.1
0.8
0.5
0.1
10
0
1
- 50 - 25
0.0
0
C
rss
On-Resistance vs. Junction Temperature
I
D
Source-Drain Diode Forward Voltage
= 22 A
T
J
= 150 °C
V
V
0
0.3
10
SD
DS
T
J
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25
C
Capacitance
oss
50
0.6
20
75
T
J
= 25 °C
V
100
V
GS
GS
= 4.5 V
= 10 V
0.9
30
125
C
150
iss
175
1.2
40
0.2
2.2
1.7
1.2
0.7
160
120
42
40
50
48
46
44
Drain Source Breakdown vs. Junction Temperature
40
80
- 50 - 25
- 50
0
0
I
D
- 25
= 250 μA
Package Limited
25
0
T
0
T
J
J
T
- Junction Temperature (°C)
- Junction Temperature (°C)
C
Threshold Voltage
25
Current Derating
50
- Case Temperature (°C)
25
50
50
75
S10-0632-Rev. A, 22-Mar-10
75
Document Number: 65902
75
100
100
100
I
D
125
= 250 μA
125
125
150
175
150
150