zxmp4a57e6 Diodes, Inc., zxmp4a57e6 Datasheet - Page 4

• Manufacturer Part Number: zxmp4a57e6
• Description: 40v P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
t
t
I
I
C
DS(on)
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
-1.0
4 of 8
-40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.86
17.4
11.1
15.8
Typ
833
122
7.6
3.6
2.7
2.5
3.3
78
47
21
⎯
⎯
⎯
⎯
⎯
⎯
7
0.080
0.150
±100
-0.95
Max
-0.5
-3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f = 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= -250μA, V
= -250μA, V
= -4A, V
= -1.8A, di/dt = 100A/μs
= -1A, R
= -40V, V
= ±20V, V
= -10V, I
= -4.5V, I
= -15V, I
= -20V, V
= -4.5V
= -10V
= -20V, V
Test Condition
ZXMP4A57E6
GS
G
≅ 6.0Ω
D
D
= 0V
D
GS
GS
GS
GS
DS
DS
= -4A
= -4A
= -2A
= 0V
= 0V
= -10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
DS
= -4A
GS
= -20V
March 2011