zxmp10a17e6 Zetex Semiconductors plc., zxmp10a17e6 Datasheet - Page 4
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zxmp10a17e6
Manufacturer Part Number
zxmp10a17e6
Description
100v P-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.ZXMP10A17E6.pdf
(7 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
zxmp10a17e6TA
Manufacturer:
DIODES
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30 000
Part Number:
zxmp10a17e6TA
Manufacturer:
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Quantity:
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ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP10A17E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
S E M I C O N D U C T O R S
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
-100
-2.0
-0.85
TYP.
36.6
29.8
13.4
10.7
424
2.8
3.0
3.5
7.2
6.1
1.7
3.8
33
48
MAX. UNIT CONDITIONS
0.350
0.450
-0.95
-1.0
-4.0
100
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 2 - SEPTEMBER 2005
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/µs
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=25°C, I
=25°C, I
= -250µA, V
= -250µA, V
= -1.4A
= -1.4A
≅ 6.0Ω, V
= -100V, V
= -15V, I
= -50V, V
= -50V, V
= -50V, V
=±20V, V
= -10V, I
= -6V, I
= -50V, I
=0V
S
S
= -1.7A,
= -1.5A,
D
D
D
D
= -1.2A
GS
DS
GS
GS
GS
= -1.4A
GS
DS
= -1.4A
= -1A
GS
= -10V
=0V
=0V
= -5V
= -10V
=V
=0V
=0V
GS