si7818dn Vishay, si7818dn Datasheet - Page 2

• Manufacturer Part Number: si7818dn
• Description: N-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Si7818DN
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
1.0
a
a
1.5
V
GS
= 10 thru 4 V
2.0
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
rr
2.5
3 V
3.0
New Product
V
V
I
DS
DS
DS
D
^ 1 A, V
I
I
= 150 V, V
= 75 V, V
V
V
F
F
V
V
V
V
V
V
DD
DD
DS
= 3 2 A di/dt = 100 A/ms
= 3.2 A, di/dt = 100 A/ms
V
I
DS
DS
DS
Test Condition
GS
DS
S
GS
= 3.2 A, V
= 100 V, R
= 100 V, R
= 0 V, V
= V
= 150 V, V
w 5 V, V
= 10 V, I
= 15 V, I
,
= 6 V, I
f = 1 MHz
GEN
GS
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
D
= 0 V, T
D
D
GS
GS
D
L
L
= 250 mA
GS
= 3.3 A
= "20 V
= 3.4 A
= 3.4 A
= 100 W
= 100 W
= 10 V
= 0 V
= 0 V
,
D
D
J
g
g
10
= 55_C
= 3.4 A
= 6 W
8
6
4
2
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
0.8
10
2
1.5
T
C
2.0
25_C
0.112
0.117
= 125_C
Typ
0.78
100
2.7
4.7
1.7
17
20
10
10
25
15
50
S-51129—Rev. C, 13-Jun-05
Document Number: 73252
2.5
Max
"100
0.135
0.142
150
1.2
2.6
3.0
30
15
15
40
25
75
4
1
5
−55_C
3.5
Unit
nC
nC
nA
mA
mA
ns
ns
W
W
W
V
A
S
V
4.0