si7888dp-t1 Vishay, si7888dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7888dp-t1
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7888DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
V
a
a
DS
1
Output Characteristics
a
- Drain-to-Source Voltage (V)
V
a
a
GS
= 10 thru 4 V
2
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
2 V
I
I
I
GS(th)
D(on)
V
3 V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
3
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
V
V
DS
I
D
DS
^ 1 A, V
= 15 V, V
I
F
V
= 24 V, V
V
V
V
V
V
V
V
V
DS
= 2.6 A, di/dt = 100 A/ms
GS
I
DS
DS
Test Condition
DS
GS
S
DS
DD
DD
= 2.6 A, V
= 0 V, V
= 10 V, I
= V
w 5 V, V
= 15 V, I
= 4.5 V, I
= 24 V, V
= 15 V, R
= 15 V, R
GEN
GS
GS
GS
, I
= 5.0 V, I
= 10 V, R
GS
= 0 V, T
D
D
GS
D
GS
D
GS
L
L
= 250 mA
= 12.4 A
= "20 V
= 12.4 A
= 9.6 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
J
D
G
= 70_C
= 12.4 A
50
40
30
20
10
= 6 W
0
0.0
0.5
V
1.0
GS
Transfer Characteristics
Min
- Gate-to-Source Voltage (V)
0.80
0.2
25_C
50
1.5
T
C
= 125_C
2.0
0.010
0.016
Typ
0.75
8.7
2.4
3.5
27
10
24
10
50
11
S-31727—Rev. B, 18-Aug-03
1
2.5
Document Number: 71876
3.0
- 55_C
Max
"100
0.012
0.020
10.5
1.2
1.5
20
20
50
20
75
2
1
5
3.5
4.0
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
4.5