si7886adp Vishay, si7886adp Datasheet - Page 4
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si7886adp
Manufacturer Part Number
si7886adp
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI7886ADP.pdf
(5 pages)
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4
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
ï0.0
ï0.2
ï0.4
ï0.6
ï0.8
0.4
0.2
0.01
ï50
0.1
2
1
10
ï25
ï4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
I
D
J
Single Pulse
= 250 mA
ï Temperature (_C)
25
10
ï3
50
*Limited by r
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
DS(on)
1
0.1
ï2
125
*V
Safe Operating Area, Junction-to-Case
GS
Square Wave Pulse Duration (sec)
u minimum V
150
V
DS
Single Pulse
T
ï Drain-to-Source Voltage (V)
10
C
1
ï1
= 25_C
GS
at which r
DS(on)
10
1
200
160
120
is specified
80
40
0
0.001
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
dc
100 s
10 s
100
10
0.01
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
ï T
t
1
A
Time (sec)
= P
t
2
DM
0.1
Z
thJA
thJA
100
S-51016—Rev. B, 23-May-05
t
t
1
2
(t)
Document Number: 73156
= 65_C/W
1
600
10