si7846dp-t1 Vishay, si7846dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7846dp-t1
• Description: N-channel 150-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71442
S-60468-Rev. D, 27-Mar-06
0.10
0.08
0.06
0.04
0.02
0.00
50
10
20
16
12
1
8
4
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 5 A
0.2
On-Resistance vs. Drain Current
= 75 V
10
V
SD
15
Q
T
g
V
- Source-to-Drain Voltage (V)
J
0.4
I
GS
D
= 150 °C
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
= 10 V
20
0.6
30
30
0.8
T
45
J
= 25 °C
40
1.0
1.2
50
60
3000
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 5 A
C
= 10 V
rss
30
2
T
V
V
0
J
DS
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
60
4
C
50
C
Vishay Siliconix
oss
iss
90
I
D
6
75
= 5 A
Si7846DP
www.vishay.com
100
120
8
125
150
150
10
3