si7858dp-t1 Vishay, si7858dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7858dp-t1
• Description: N-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71832
S-31727—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
0.004
0.003
0.002
0.001
0.000
60
10
1
5
4
3
2
1
0
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
10
On-Resistance vs. Drain Current
= 25 A
T
0.2
V
J
= 6 V
9
SD
= 150_C
Q
- Source-to-Drain Voltage (V)
g
I
0.4
20
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
18
30
0.6
27
0.8
40
V
V
T
GS
GS
J
= 25_C
= 2.5 V
= 4.5 V
36
1.0
50
1.2
60
45
0.015
0.012
0.009
0.006
0.003
0.000
7500
6000
4500
3000
1500
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-25
V
I
D
GS
= 25 A
2
V
= 4.5 V
DS
V
C
T
2
GS
rss
J
0
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
4
Capacitance
25
Vishay Siliconix
C
4
50
C
iss
6
oss
I
D
75
Si7858DP
= 25 A
8
100
6
www.vishay.com
10
125
150
8
12
3