si7806bdn-t1-e3 Vishay, si7806bdn-t1-e3 Datasheet - Page 4

• Manufacturer Part Number: si7806bdn-t1-e3
• Description: N-channel 30-v D-s Fast Switching Mosfet
• Manufacturer: Vishay

Si7806BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
I
D
J
− Temperature (°C)
= 250 µA
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
75
1
0.1
r
Limited
DS(on)
10
100
I
D(on)
Single Pulse
-2
T
A
Limited
V
= 25 °C
125
DS
Safe Operating Area
Square Wave Pulse Duration (sec)
− Drain-to-Source Voltage (V)
150
1
10
BV
-1
DSS
Limited
10
I
50
40
30
20
10
DM
0
0.01
1
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse Power, Junction-to-Ambient
100
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Time (sec)
1
JM
− T
t
1
A
= P
S-60790-Rev. B, 08-May-06
t
2
Document Number: 73081
DM
10
Z
thJA
100
thJA
t
t
1
2
(t)
= 65 °C/W
100
600
600