si7866adp Vishay, si7866adp Datasheet - Page 4

• Manufacturer Part Number: si7866adp
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si7866ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.2
- 0.4
- 0.6
- 0.8
100
0.1
0.4
0.2
0.0
10
1
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
I
D
0.6
50
= 250
T
75
µA
J
0.8
= 25 °C
I
0.01
D
100
0.1
10
= 5 mA
0.01
100
1
Limited by
R
Safe Operating Area, Junction-to-Ambient
1.0
* V
DS(on)
125
GS
Single Pulse
T
*
>
A
V
minimum V
1.2
= 25 °C
150
0.1
DS
- Drain-to-Source Voltage (V)
GS
at which R
1
DS(on)
0.010
0.008
0.006
0.004
0.002
0.000
200
160
120
80
40
0
0.001
10
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
0.01
T
V
J
GS
= 25 °C
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-80440-Rev. C, 03-Mar-08
Document Number: 73380
6
T
J
= 125 °C
1
8
10
10