zxmn6a08k Zetex Semiconductors plc., zxmn6a08k Datasheet

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zxmn6a08k

Manufacturer Part Number
zxmn6a08k
Description
60v Dpak N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
zxmn6a08kTC
Manufacturer:
SKYWORKS
Quantity:
12 500
ZXMN6A08K
60V DPAK N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features a unique structure
combining the benefits of low on-resistance and fast switching, making it ideal for
high efficiency power management applications.
Features
Applications
Ordering information
Device
ZXMN6A08KTC
Device marking
ZXMN
6A08
Issue 1 – December 2008
© Diodes Incorporated, 2008
Low on-resistance
Fast switching speed
Low gate drive
DPAK package
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
V
(BR)DSS
60
0.150 @ V
0.080 @ V
Reel size
(inches)
R
DS
13
(on)
GS
GS
= 4.5V
(Ω)
= 10V
Tape width
(mm)
16
I
D
18.2
13.3
1
(A)
Quantity
per reel
2,500
Pinout – top view
www.diodes.com
www.zetex.com
Part no.
G
D
S

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zxmn6a08k Summary of contents

Page 1

... Low gate drive • DPAK package Applications • DC-DC Converters • Power Management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A08KTC 13 Device marking ZXMN 6A08 Issue 1 – December 2008 © Diodes Incorporated, 2008 I (A) (Ω) D 18.2 = 10V 13.3 = 4.5V Tape width ...

Page 2

... Diodes Incorporated, 2008 SYMBOL =25°C ( =100°C ( =25°C ( =70°C (b) A =25°C ( SYMBOL ZXMN6A08K LIMIT UNIT 60 V DSS ± 18.2 A 11.5 8.1 A 6.5 5.5 24.3 A 9.0 A 24 32.8 mW/°C 9. mW/°C 2. ...

Page 3

... Transient Thermal Impedance 4.5 Single Pulse 4.0 T =25°C amb 3.5 50mm x 50mm 3.0 2oz FR4 2.5 2.0 1.5 1.0 0.5 0 100 ZXMN6A08K R DS(on) Limit DC 1s 100ms 10ms T =25°C amb 1ms 50mm x 50mm 100µs 2oz FR4 Drain-Source Voltage (V) DS Safe Operating Area T =25°C amb ...

Page 4

... 0. ZXMN6A08K UNIT CONDITIONS 250μ =0V μ 60V = =±20V = 250μ Ω 10V 4.8A Ω 4.5V 4. 15V 4. 40V =0V f=1MHz ...

Page 5

... V = 10V 0 -50 Tj Junction Temperature (°C) Normalised Curves v Temperature 4V 4. 150° 0 10V 0.01 0 Source-Drain Diode Forward Voltage 5 ZXMN6A08K 10V 5V 4V 3. Drain-Source Voltage (V) DS Output Characteristics V = 10V 4. DS(on) V GS(th 250uA 100 T = 25°C ...

Page 6

... Typical characteristics 600 400 f = 1MHz C ISS 200 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Issue 1 - December 2008 © Diodes Incorporated, 2008 1. OSS C RSS Gate-Source Voltage v Gate Charge 6 ZXMN6A08K V = 30V Charge (nC) www.zetex.com www.diodes.com 6 ...

Page 7

... L 0.055 0.762 1.14 L1 5.21 5.46 L2 0.457 0.61 L3 0.035 0.457 0.584 L4 0.025 5.41 6.22 L5 0.045 5.21 - q1° 6.35 6.73 q° 4. ZXMN6A08K Inches Millimeters Max Min Max 0.090 BSC 2.29 BSC 0.410 9.40 10.41 0.070 1.40 1.78 0.108 REF 2.74 REF 0.020 BSC 0.508 BSC 0.065 0.89 1.65 0.040 0.635 1.016 0.060 1.14 1.52 0° 10° 0° 10° 0° 15° ...

Page 8

... Min Chuan Road Changning Road Hsin-Tien Shanghai, China Taipei, Taiwan Tel: (+86) 215 241 4882 Tel: (+886) 289 146 000 Fax (+86) 215 241 4891 Fax: (+886) 289 146 639 8 ZXMN6A08K or www.diodes.com Shenzhen Korea Room A1103-04, 6 Floor, Changhwa B/D, ANLIAN Plaza, #4018 1005-5 Yeongtong-dong, Jintian Road ...

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