zxmn2b03e6 Zetex Semiconductors plc., zxmn2b03e6 Datasheet - Page 4

• Manufacturer Part Number: zxmn2b03e6
• Description: 20v Sot23-6 N-channel Enhancement Mode Mosfet With Low Gate Drive Capability
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*) (‡)
Symbol
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
0.4
20
4
1160
Typ.
13.5
33.9
12.4
14.5
0.67
10.8
210
136
4.2
6.2
2.8
3.4
2
2%.
0.040
0.055
0.075
Max.
0.95
100
1.0
1
Unit Conditions
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN2B03E6
I
V
V
I
V
V
V
V
V
f=1MHz
V
I
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250 A, V
= 1A
= 4.3A
=25°C, I
=25°C, I
≈ 6.0
= 20V, V
= 10V, I
= 10V, V
= 10V, V
=±8V, V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 10V, V
=0V
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S
F
= 2.8A,
= 1.8A,
D
DS
D
D
D
GS
GS
GS
GS
= 4.3A
GS
DS
= 4.3A
= 3.7A
= 3.2A
=0V
=0V
=0V
= 4.5V
= 4.5V
=V
=0V
GS