zxmn2am832 Zetex Semiconductors plc., zxmn2am832 Datasheet

no-image

zxmn2am832

Manufacturer Part Number
zxmn2am832
Description
Dual 20v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
MPPS™ Miniature Package Power Solutions
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 20V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DNA
ISSUE 3 - JANUARY 2005
DEVICE
ZXMN2AM832TA
ZXMN2AM832TC
(BR)DSS
Low On - Resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
DC-DC Converters
Power Management Functions
Disconnection switches
Motor Control
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
= 20V; R
DS(ON)
REEL
13’‘
7
’‘
= 0.12 ; I
WIDTH
TAPE
8mm
8mm
D
= 3A
10000 units
QUANTITY
3000 units
PER REEL
1
PINOUT
ZXMN2AM832
3mm x 2mm Dual MLP
S E M I C O N D U C T O R S
3x2mm Dual Die MLP
underside view
7

Related parts for zxmn2am832

zxmn2am832 Summary of contents

Page 1

... WIDTH ZXMN2AM832TA 7 ’‘ 8mm ZXMN2AM832TC 13’‘ 8mm DEVICE MARKING DNA ISSUE 3 - JANUARY 2005 = 3A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN2AM832 3x2mm Dual Die MLP PINOUT 7 3mm x 2mm Dual MLP underside view ...

Page 2

... ZXMN2AM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V =10V =10V =10V Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) (f) Power Dissipation at TA=25°C Linear Derating Factor (b) (f) Power Dissipation at TA=25°C ...

Page 3

... ISSUE 3 - JANUARY 2005 TYPICAL CHARACTERISTICS 3 ZXMN2AM832 ...

Page 4

... ZXMN2AM832 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... ISSUE 3 - JANUARY 2005 TYPICAL CHARACTERISTICS 5 ZXMN2AM832 ...

Page 6

... ZXMN2AM832 400 C ISS C OSS 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS 4 4 1MHz 3.5 3.0 2.5 2.0 C 1.5 RSS 1.0 0.5 0 Gate-Source Voltage v Gate Charge 10V Charge (nC) ISSUE 3 - JANUARY 2005 ...

Page 7

... BSC 0.032 0.040 0 Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN2AM832 INCHES MAX. MIN. MAX. 0.0256 BSC 0.0787 BSC 0.63 0.017 0.0249 0.36 0.006 0.014 ...

Related keywords