zxmn3g32dn8 Zetex Semiconductors plc., zxmn3g32dn8 Datasheet - Page 4

• Manufacturer Part Number: zxmn3g32dn8
• Description: 30v So8 Dual N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
NOTES:
Parameter
Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source
On-State Resistance
Forward
Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Switching
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode
Diode Forward Voltage
(†)
(‡)(†)
(*)(†)
(*)
(*)
V
I
V
R
g
C
C
C
t
t
t
Q
V
Symbol
I
t
Q
Q
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
amb
Min.
1.0
= 25°C unless otherwise stated)
30
4
Typ.
10.5
1.86
0.68
472
178
2.5
3.1
9.7
2.3
12
65
14
0.028
0.045
Max.
100
0.5
3.0
1.2
Unit
nA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ZXMN3G32DN8
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
Conditions
D
D
D
j
DS
GS
GS
GS
DS
DS
DD
G ≅
DS
GS
=25°C, I
= 250µA, V
= 250µA, V
= 6A
= 30V, V
= 15V, I
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
6.0Ω, V
www.zetex.com
S
= 1.7A,
D
D
D
D
GS
GS
GS
GS
= 6.0A
= 6.0A
= 1A
GS
DS
DS
= 4.9A
=0V
=0V
=10V
= 10V
=0V
=V
=0V
GS