zxmn3b01f Zetex Semiconductors plc., zxmn3b01f Datasheet

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zxmn3b01f

Manufacturer Part Number
zxmn3b01f
Description
30v N-channel Enhancement Mode Mosfet 2.5v Gate Drive
Manufacturer
Zetex Semiconductors plc.
Datasheet

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zxmn3b01fTA
Manufacturer:
ZETEX
Quantity:
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zxmn3b01fTA
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30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - DECEMBER 2005
V
DEVICE
ZXMN3B01FTA
ZXMN3B01FTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
3B1
=30V : R
DS(on)
REEL
SIZE
13”
7”
=0.15 ; I
WIDTH
TAPE
8mm
8mm
D
=2A
10000 units
QUANTITY
3000 units
PER REEL
1
ZXMN3B01F
TOP VIEW
PINOUT

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zxmn3b01f Summary of contents

Page 1

... Power Management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3B01FTA 7” 8mm ZXMN3B01FTC 13” 8mm DEVICE MARKING • 3B1 ISSUE 1 - DECEMBER 2005 =2A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN3B01F PINOUT TOP VIEW ...

Page 2

... ZXMN3B01F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V =4.5V =4.5V =4.5V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) Power Dissipation at T =25°C A Linear Derating Factor (b) Power Dissipation at T =25°C ...

Page 3

... ISSUE 1 - DECEMBER 2005 TYPICAL CHARACTERISTICS 3 ZXMN3B01F ...

Page 4

... ZXMN3B01F ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay Time Rise Time ...

Page 5

... ISSUE 1 - DECEMBER 2005 CHARACTERISTICS 5 ZXMN3B01F ...

Page 6

... ZXMN3B01F Charge Basic gate charge waveform V DS 90% 10 d(on) r d(off) t (on) Switching time waveforms TYPICAL CHARACTERISTICS 12V Gate charge test circuit (on) Switching time test circuit ...

Page 7

... Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN3B01F Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex ...

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