sib488dk Vishay, sib488dk Datasheet

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sib488dk

Manufacturer Part Number
sib488dk
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 65668
S10-0045-Rev. A, 11-Jan-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
C
12
= 25 °C, package limited.
1.60 mm
(V)
6
PowerPAK SC-75-6L-Single
D
5
D
4
0.020 at V
0.024 at V
0.029 at V
S
D
R
1
DS(on)
S
D
1.60 mm
2
GS
GS
GS
G
(Ω)
J
= 4.5 V
= 2.5 V
= 1.8 V
3
= 150 °C)
b, f
N-Channel 12-V (D-S) MOSFET
Ordering Information: SiB488DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
(A)
Part # code
9
9
9
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
7.5 nC
g
Marking Code
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A G X
X X X
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch, PA Switch and Battery Switch for Portable
• High Frequency dc-to-dc Converters
Symbol
Symbol
T
J
R
R
Definition
SC-75 Package
- Small Footprint Area
- Low On-Resistance
Devices
V
V
I
P
, T
DM
I
I
thJC
GS
thJA
DS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
7.5
41
- 55 to 150
7.2
2.4
1.6
Limit
9
2
260
± 8
8.4
12
35
13
9
9
9
b, c
b, c
a
a
b, c
a
b, c
b, c
Maximum
9.5
51
Vishay Siliconix
G
SiB488DK
®
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
°C
W
V
A
1

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sib488dk Summary of contents

Page 1

... Load Switch, PA Switch and Battery Switch for Portable Devices • High Frequency dc-to-dc Converters Marking Code Part # code Lot Traceability and Date code Ordering Information: SiB488DK-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol °C ...

Page 2

... SiB488DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2 SiB488DK Vishay Siliconix = 125 25_ C C 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss 0 0 ...

Page 4

... SiB488DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0 250 µA D 0.7 0.6 0.5 0.4 0.3 0 Temperature(°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1 100 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65668 S10-0045-Rev. A, 11-Jan-10 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB488DK Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... SiB488DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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