si7170dp Vishay, si7170dp Datasheet - Page 4

• Manufacturer Part Number: si7170dp
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7170DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
0.01
100
0.6
0.3
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
V
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
75
0.8
T
0.01
100
I
J
0.1
D
10
= 25 °C
100
Limited by R
1
0.01
= 250 µA
I
* V
1.0
D
Safe Operating Area, Junction-to-Ambient
= 5 mA
125
GS
> minimum V
New Product
DS(on)
V
Single Pulse
150
0.1
1.2
DS
T
A
- Drain-to-Source Voltage (V)
= 25 °C
*
GS
at which R
1
BVDSS
DS(on)
0.015
0.012
0.009
0.006
0.003
0.000
200
160
120
80
40
10
0
0
0 .
is specified
0
0
I
1
On-Resistance vs. Gate-to-Source Voltage
D
Single Pulse Power, Junction-to-Ambient
= 15 A
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
100
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-80648-Rev. A, 24-Mar-08
Document Number: 69981
6
T
1
T
J
J
= 125 °C
= 25 °C
8
10
1
0