si7172dp Vishay, si7172dp Datasheet - Page 4

• Manufacturer Part Number: si7172dp
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

Si7172DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
4.0
3.6
3.2
2.8
2.4
2.0
0.1
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
= 150 °C
V
SD
0
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
75
0.8
0.001
T
0.01
J
100
I
0.1
D
10
= 25 °C
100
1
= 250 µA
0.1
1.0
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
T
125
C
GS
= 25 °C
Limited by R
New Product
> minimum V
V
150
1.2
DS
1
- Drain-to-Source Voltage (V)
DS(on)
GS
at which R
*
10
DS(on)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
100
80
60
40
20
100
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
100 ms
1 s
10 s
DC
100 µs
10 ms
0.01
1000
4
V
GS
- Gate-to-Source Voltage (V)
0.1
8
Time (s)
Single Pulse Power
1
S-81730-Rev. A, 04-Aug-08
T
T
Document Number: 68763
J
J
12
= 125 °C
= 25 °C
10
I
D
= 5.9 A
16
100
1000
20