si7148dp-t1 Vishay, si7148dp-t1 Datasheet

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si7148dp-t1

Manufacturer Part Number
si7148dp-t1
Description
N-channel 75-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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si7148dp-t1-E3
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si7148dp-t1-GE3
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si7148dp-t1-GE3
Quantity:
70 000
Notes:
a.
b.
c.
d.
e.
Document Number: 73314
S-50520—Rev. A, 21-Mar-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
Based on T
Surface Mounted on 1” x 1” FR4 Board.
t = 10 sec
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
DS
75
75
(V)
C
Ordering Information: Si7148DP-T1—E3
= 25_C.
8
6.15 mm
0.0145 @ V
D
0.011 @ V
7
r
DS(on)
D
6
J
J
= 150_C)
= 150_C)
D
GS
GS
PowerPAK SO-8
Parameter
Bottom View
(W)
5
= 10 V
= 4.5 V
D
1
N-Channel 75-V (D-S) MOSFET
S
2
I
d, e
S
D
(A)
28
28
3
S
a
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Q
L = 0 1 mH
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
g
New Product
33 nC
33 nC
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
Symbol
T
V
V
J
E
I
I
P
P
, T
DM
I
I
I
I
AS
DS
GS
D
D
S
S
AS
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 100% R
D RoHS Compliant
APPLICATIONS
D Primary Side Switch
G
N-Channel MOSFET
g
Tested
−50 to 150
Limit
4.3
5.4
3.4
28
12
"20
100
260
75
28
22
60
28
45
96
61
b, c
b, c
b, c
b, c
b, c
D
S
Vishay Siliconix
Si7148DP
www.vishay.com
Completely
Product Is
Pb-free
Unit
mJ
_C
_C
W
W
V
V
A
A
1

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si7148dp-t1 Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7148DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current ...

Page 2

... Si7148DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface mounted on 1” x 1” FR4 board. b. Maximum under steady state conditions is 65 _C/W. SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... S-50520—Rev. A, 21-Mar-05 New Product Symbol Test Condition T = 25_C 4 di/dt = 100 A/ms di/dt 100 A/ms Si7148DP Vishay Siliconix Min Typ Max 25 60 0.76 1 105 = 25_C www.vishay.com Unit ...

Page 4

... Si7148DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru 0.0 0.4 0.8 1.2 V − Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.018 0.016 0.014 0.012 0.010 0.008 0.006 − Drain Current (A) ...

Page 5

... Safe Operating Area, Junction-to-Ambient 100 *Limited by r DS(on 0 25_C C Single Pulse 0.01 0.01 0 − Drain-to-Source Voltage ( minimum V at which Si7148DP Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0. 0.04 0. 125_C J 0. 25_C J 0.01 0. − Gate-to-Source Voltage (V) ...

Page 6

... Si7148DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating Package Limited 100 T − Case Temperature (_C) C Power, Junction-to-Case 120 100 − Case Temperature (_C) C *The power dissipation P is based on T ...

Page 7

... Document Number: 73314 S-50520—Rev. A, 21-Mar-05 New Product −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) Si7148DP Vishay Siliconix Notes Duty Cycle Per Unit Base = R ...

Page 8

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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