si7143dp Vishay, si7143dp Datasheet

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si7143dp

Manufacturer Part Number
si7143dp
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7143dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7143dp-T1-GE3
Quantity:
15 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on T
Document Number: 65670
S10-0112-Rev. A, 18-Jan-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
Ordering Information: Si7143DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
- 30
(V)
8
6.15 mm
D
C
0.0100 at V
0.0186 at V
= 25 °C
7
D
6
R
D
PowerPAK SO-8
DS(on)
5
Bottom View
GS
GS
D
(Ω)
= - 10 V
= - 4.5V
J
= 150 °C)
1
S
2
P-Channel 30-V (D-S) MOSFET
S
I
3
D
S
- 35
- 35
(A)
5.15 mm
4
e,f
G
c, d
A
Q
= 25 °C, unless otherwise noted
24.6 nC
g
(Typ.)
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• Adaptor Switch
• Notebook PC
Definition
Package with Small Size and Low 1.07 mm
Profile
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
g
stg
Tested
®
Power MOSFET
- 50 to 150
- 16.1
- 12.9
- 3.5
4.2
2.7
31.25
Limit
G
- 35
- 35
± 20
35.7
22.8
- 30
- 60
- 30
- 25
260
a, b
a, b
a, b
P-Channel MOSFET
e
e
a, b
a, b
Vishay Siliconix
®
Si7143DP
S
D
www.vishay.com
Unit
mJ
°C
W
V
A
1

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si7143dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7143DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7143DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 70 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... 3600 3000 2400 1800 1200 600 1.8 1.5 1 0.9 0 Si7143DP Vishay Siliconix T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-Source Voltage (V) ...

Page 4

... Si7143DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage - 1 250 µ 1.6 - 1.9 - 2 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0.04 0.03 0. °C J 0.01 0.00 0.9 1.2 200 160 120 100 125 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7143DP Vishay Siliconix 125 150 100 125 150 T -- Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 5 ...

Page 6

... Si7143DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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