si7123dn Vishay, si7123dn Datasheet - Page 4

• Manufacturer Part Number: si7123dn
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si7123DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.2
0.01
100
0.4
0.3
0.2
0.1
0.0
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
V
0.2
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
- Temperature (°C)
25
0.4
T
J
= 150 °C
50
I
0.001
D
0.01
100
0.6
= - 250 µA
0.1
10
75
1
0.01
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
100
T
J
GS
0.8
= 25 °C
Single Pulse
> minimum V
T
125
C
V
0.1
DS
= 25 °C
DS(on)
New Product
- Drain-to-Source Voltage (V)
150
1.0
*
GS
at which R
1
DS(on)
10
0.04
0.03
0.02
0.01
is specified
50
40
30
20
10
0
0
0.01
1.3
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
0.1
V
GS
2.3
- Gate-to-Source Voltage (V)
1.0
Time (s)
3.3
S-82117-Rev. B, 08-Sep-08
Document Number: 69655
10
I
D
T
T
= - 15 A
A
100
A
4.3
= 150 °C
= 25 °C
1000