si7112dn-t1 Vishay, si7112dn-t1 Datasheet - Page 4

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si7112dn-t1

Manufacturer Part Number
si7112dn-t1
Description
N-channel 30-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Si7112DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
I
T
D
J
= 250
25
- Temperature (°C)
10
-3
µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
0.1
10
-2
*Limited by r
Limited
*V
I
125
D(on)
GS
Single Pulse
T
C
>
V
Square Wave Pulse Duration (sec)
= 25 °C
150
minimum V
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10
-1
GS
BV
at which r
DSS
Limited
DS(on)
10
50
40
30
20
10
1
0
0.01
is specified
I
DM
Single Pulse Power, Junction-to-Ambient
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
1
- T
A
t
1
= P
S-60926-Rev. F, 29-May-06
t
Document Number: 72864
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
100
600
600

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