2n7002kdw PanJit Semiconductors (Pan Jit), 2n7002kdw Datasheet
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2n7002kdw
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2n7002kdw Summary of contents
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... N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • @10V,I @500mA=3 DS(ON • @4.5V,I @200mA=4 DS(ON • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ...
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... ELECTRICAL CHARACTERISTICS ...
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... Typical Characteristics Curves (T =25 C,unless otherwise noted 10V ~ 6. 0.8 0.6 0.4 0 Drain-to-Source Voltage (V) DS Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic =4. =10V 0.2 0.4 0 Drain Current (A) D FIG.3- On Resistance vs Drain Current 1.8 V =10V GS I =500mA D 1.6 1.4 1.2 1 0.8 0.6 -50 ...
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... Vgs Qg Qsw Vgs(th) Qg(th) Qgs Qgd Fig.6 - Gate Charge Waveform 1.2 1.1 1 0.9 0.8 0.7 -50 - Junction Temperature ( J Fig.8 - Threshold Voltage vs Temperature =125 O 0 -55 O 0.01 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig.10 - Source-Drain Diode Forward Voltage STAD-JAN.11.2007 Qg I =250uA D 75 100 ...
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... MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose ...