2n7002kg SeCoS Halbleitertechnologie GmbH, 2n7002kg Datasheet

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2n7002kg

Manufacturer Part Number
2n7002kg
Description
190 Ma, 60 V, Rds On = 2 ?? N-ch Small Signal Mosfet With Gate Protection
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
15-May-2009 Rev. C
FEATURES
APPLICATIONS
PACKAGE INFORMATION
MARKING CODE
ABSOLUTE MAXIMUM RATINGS
Weight: 0.07800g (Approximately)
Notes:
1.
2.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance
Junction-Ambient
Operating Junction and
Storage Temperature
7002K
2 kV ESD Protection
Lower On-resistance: 2 Ω
Low Threshold: 2 V (Typ.)
Low Input Capacitance: 25 pF
Fast Switching Performance: 25 nS
Low Input and Output Leakage
Direct Logic-Level Interface:
TTL/CMOS
Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories,
Transistors, etc.
Battery Operated Systems
Solid-State Relays
Pulse width limited by maximum junction temperature.
Surface mounted on FR4 board.
Elektronische Bauelemente
Parameter
2
1
2
2
Max.
A suffix of “-C” specifies halogen & lead-free
Symbol
T
RoHS Compliant Product
J
R
V
V
, T
I
P
Gate
I
DM
GS
θJA
DS
D
D
1
STG
-55 ~ +150
Ratings
N-Ch Small Signal MOSFET with Gate Protection
0.35
0.14
N-Ch
±20
300
190
800
350
Source
60
Drain
3
2
190 mA, 60 V, R
°C/W
Unit
mA
°C
W
V
2N7002KG
K
F
REF.
A
B
C
D
E
F
1
Top View
E
A
3
Min.
2.80
2.10
1.20
0.89
1.78
0.30
L
Millimeter
Test Conditions
DS(ON)
2
@T
@T
G
@T
@T
Max.
3.04
2.55
1.40
1.15
2.04
0.50
SOT-23
C B
A
A
= 2 Ω
D
A
A
=100°C
=100°C
=25°C
=25°C
REF.
H
G
H
K
J
L
1
Min.
0.09
0.45
0.08
0.89
Millimeter
0.6 REF.
Page 1 of 5
2
0.177
Max.
0.18
0.60
1.02
3
J

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2n7002kg Summary of contents

Page 1

... Drain 3 1 Gate 2 Source Ratings Symbol N- ±20 GS 300 I D 190 I 800 DM 0. 0.14 Max. 350 R θ -55 ~ +150 J STG 2N7002KG = 2 Ω 190 mA DS(ON) SOT- Top View Millimeter REF. REF. Min. Max. Min. A 2.80 3.04 G 0.09 B 2.10 2. ...

Page 2

... I DSS - - - - 800 - I D(ON) 500 - - - 2 r DS(ON DS(ON 0.4 Ciss - 30 Coss - 6 Crss - 2 (ON (OFF) 2N7002KG = 2 Ω 190 mA DS(ON) 2 Max. Unit Test Conditions - 10uA 2 250uA 10V 200 μA ± ±20V DS GS ±150 ±10V DS GS ±1000 ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVE 15-May-2009 Rev. C 2N7002KG 190 mA DS(ON) N-Ch Small Signal MOSFET with Gate Protection = 2 Ω Page ...

Page 4

... Elektronische Bauelemente CHARACTERISTIC CURVE (N-Ch, cont’d) 15-May-2009 Rev. C 2N7002KG 190 mA DS(ON) N-Ch Small Signal MOSFET with Gate Protection = 2 Ω Page ...

Page 5

... Elektronische Bauelemente CHARACTERISTIC CURVE (N-Ch, cont’d) 15-May-2009 Rev. C 2N7002KG 190 mA DS(ON) N-Ch Small Signal MOSFET with Gate Protection = 2 Ω Page ...

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