2sc3518 Renesas Electronics Corporation., 2sc3518 Datasheet
2sc3518
Manufacturer Part Number
2sc3518
Description
Npn Silicon Epitaxial Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC3518.pdf
(4 pages)
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Document No. D18263EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
(Previous No. TC-1662A)
DESCRIPTION
Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High DC Current Gain h
• Low V
• Complement to 2SA1385-Z
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
The 2SC3518-Z is designed for Audio Frequency Amplifier and
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation (T
Junction Temperature
Storage Temperature
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2. When mounted on ceramic substrate of 7.5 cm
CE(sat)
: V
CE(sat)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 0.09 V TYP.
Note 1
A
FE
= 25°C)
= 100 to 400
NPN SILICON EPITAXIAL TRANSISTOR
Note 2
The mark <R> shows major revised points.
I
V
V
V
I
C(pulse)
C(DC)
T
P
CBO
CEO
T
EBO
stg
T
j
A
= 25°C)
−55 to +150
DATA SHEET
150
2.0
60
60
7
5
7
2
× 0.7 mm
°C
°C
W
V
V
V
A
A
SILICON POWER TRANSISTOR
<R>
PACKAGE DRAWING (Unit: mm)
Note The depth of notch at the top of the fin is
2.3 ±0.3
TO-252 (MP-3Z)
from 0 to 0.2 mm.
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2SC3518-Z
4
2.3 ±0.3
Note
0.5 ±0.1
2.3 ±0.2
1. Base
2. Collector
3. Emitter
4. Collector Fin
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
1985, 2006
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2sc3518 Summary of contents
Page 1
... NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain h = 100 to 400 FE • Low 0.09 V TYP. CE(sat) CE(sat) • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage ...
Page 2
... Data Sheet D18263EJ3V0DS 2SC3518-Z ...
Page 3
... Data Sheet D18263EJ3V0DS 2SC3518-Z 3 ...
Page 4
... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SC3518-Z Not all M8E 02. 11-1 ...