2sc3356-t1b Renesas Electronics Corporation., 2sc3356-t1b Datasheet - Page 2

• Manufacturer Part Number: 2sc3356-t1b
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350
Note Old Specification/New Specification
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
50 to 100
R23/Q
R23
Note
Symbol
S
h
C
FE
I
80 to 160
I
re
R24/R
NF
CBO
EBO
f
21e
T
Note 2
Note 1
R24

2
µ
A
Note
V
V
V
V
V
V
V
s, Duty Cycle ≤ 2%
Data Sheet PU10209EJ02V0DS
= +25°C)
CB
EB
CE
CE
CE
CE
CB
= 1.0 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
125 to 250
Test Conditions
R25/S
E
C
C
C
C
E
C
= 0 mA
= 0 mA, f = 1 MHz
R25
= 20 mA
= 20 mA
= 20 mA, f = 1 GHz
= 7 mA, f = 1 GHz
= 0 mA
Note
MIN.
50
–
–
–
–
–
−
TYP.
11.5
0.55
120
1.1
–
–
7
MAX.
250
1.0
1.0
2.0
1.0
–
–
2SC3356
GHz
Unit
µ
µ
dB
dB
pF
–
A
A