2sc3647l-ab3-r Unisonic Technologies, 2sc3647l-ab3-r Datasheet - Page 4

• Manufacturer Part Number: 2sc3647l-ab3-r
• Description: Npn Epitaxial Silicon Transistor
• Manufacturer: Unisonic Technologies

■
2SC3647
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1.0
TYPICAL CHARACTERICS(Cont.)
0
7
5
3
2
7
5
3
7
0
0.01
20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
Ambient Temperature, Ta (℃)
3
40
Collector Current, I
5 7
60
V
0.1
BE ( sat)
P
C
80
- Ta
2
- I
C
100
3
C
(A)
5 7
120
I
1.0
C
/I
B
140
= 10
2 3
160
2
NPN EPITAXIAL SILICON TRANSISTOR
0.01
1.0
0.1
5
3
2
7
5
3
2
7
5
3
2
7
5
5
One Pulse - Ta = 25℃
Mounted on ceramic board
(250mm × 0.8mm)
I
I
CP
C
7
1.0
Collector to Emitter Voltage, V
2
3
5
7
A S O
10
2
3
QW-R208-039,A
CE
5
(V)
7
100
4
2