2sc3931 Panasonic Corporation of North America, 2sc3931 Datasheet
2sc3931
Manufacturer Part Number
2sc3931
Description
Silicon Npn Epitaxial Planer Type For High-frequency Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC3931.pdf
(4 pages)
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Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
Common-emitter reverse transfer
capacitance
Power gain
Noise figure
automatic insertion through the tape packing
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
65 to 160
*
T
C
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
P
CBO
I
T
V
V
CEO
EBO
a
stg
V
C
C
h
C
NF
G
100 to 260
j
f
CBO
EBO
= 25°C
FE
BE
T
re
P
D
−55 to +150
Rating
I
I
V
V
V
V
V
V
C
E
150
150
CB
CB
CB
CB
CB
CB
30
20
15
= 10 µA, I
= 10 µA, I
3
SJC00142BED
= 6 V, I
= 6 V, I
= 6 V, I
= 6 V, I
= 6 V, I
= 6 V, I
E
E
E
E
E
E
C
E
Conditions
Unit
mW
mA
= −1 mA, f = 200 MHz
= −1 mA
= −1 mA
= −1 mA, f = 10.7 MHz
= −1 mA, f = 100 MHz
= −1 mA, f = 100 MHz
°C
°C
= 0
= 0
V
V
V
Marking Symbol: U
10˚
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
Min
450
30
65
3
2
Typ
720
650
0.8
3.3
24
SMini3-G1 Package
Max
260
1.0
0.15
EIAJ: SC-70
1: Base
2: Emitter
3:Collector
+0.10
–0.05
Unit: mm
MHz
Unit
mV
pF
dB
dB
V
V
1
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2sc3931 Summary of contents
Page 1
... Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency f T • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T ...
Page 2
... 200 160 120 120 160 ( °C ) Ambient temperature T a 25° 75°C −25° 0.4 0.8 1.2 1.6 2 Base-emitter voltage V BE 200 = 25°C ...
Page 3
... I E −3 −4 100 − 150 MHz −6 − 0.5 − 0.4 − 0.3 − 0.2 − 0 Reverse transfer conductance g re SJC00142BED 2SC3931 NF 100 MHz = 50 kΩ 25° − 0.1 −1 − ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...