2sc4767 Panasonic Corporation of North America, 2sc4767 Datasheet

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2sc4767

Manufacturer Part Number
2sc4767
Description
Transistors Selection Guide By Applications And Functions
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistor
2SC4767
Silicon NPN epitaxial planer type
For high-frequency power amplification
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
High-frequency output
Overall efficiency
Features
High transition frequency f
Output of 0.6W is obtained in the VHF band (f=175MHz).
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
Symbol
V
V
V
I
I
P
T
T
CP
C
T
C
j
stg
CBO
CEO
EBO
.
I
h
V
f
C
P
CBO
T
FE
(Ta=25˚C)
O
Symbol
CE(sat)
ob
*
(Ta=25˚C)
–55 ~ +150
Ratings
150
0.5
0.3
36
16
3
1
V
V
I
V
V
V
V
C
CB
CC
CC
CB
CE
CB
= 100mA, I
= 10V, I
= 13.5V, P
= 13.5V, P
= 13.5V, I
= 20V, I
= 10V, I
Unit
Conditions
E
˚C
˚C
E
E
W
V
V
V
A
A
= –100mA, f = 200MHz
B
i
i
= 0
C
= 0, f = 1MHz
= 0.03W, f = 175MHz
= 0.03W, f = 175MHz
= 10mA
= 100mA
*
Refer to the P
**
O
measurment circuit
1.27
1 2 3
5.0 0.2
2.54 0.15
min
1.5
0.6
0.7 0.1
1.27
0.45
+0.15
–0.1
typ
0.9
50
60
2
4
0.45
**
Pulse measurement
1:Emitter
2:Collector
3:Base
TO–92NL Package
+0.15
–0.1
max
4.0 0.2
10
1
8
Unit: mm
GHz
Unit
pF
W
%
V
A
1

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2sc4767 Summary of contents

Page 1

... Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification Features High transition frequency Output of 0.6W is obtained in the VHF band (f=175MHz). Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Peak collector current ...

Page 2

... — 160 Ta=25˚C 140 I =4.0mA B 120 100 Collector to emitter voltage V 2SC4767 L 2 Output 50 15pF 30pF 25pF 0.0025pF I — 400 350 300 3.5mA 250 3.0mA 2.5mA 200 2.0mA 150 1.5mA 100 1 ...

Page 3

... Collector current — 2.0 V =13.5V CC f=175MHz Ta=25˚C 1.6 1.2 0.8 0 120 160 200 ( mW ) Input power P i 2SC4767 f — 4.0 V =10V CB Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 –3 –10 –30 –100 –300 –1000 ( mA ) Emitter current ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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