2sc4702xv-tr-e Renesas Electronics Corporation., 2sc4702xv-tr-e Datasheet
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
2sc4702xv-tr-e
Available stocks
Related parts for 2sc4702xv-tr-e
2sc4702xv-tr-e Summary of contents
Page 1
Silicon NPN Epitaxial Application High voltage amplifier Features High breakdown voltage V = 300 V CEO Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “XV–”. Absolute Maximum Ratings Item ...
Page 2
Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Rev.3.00 Aug 10, ...
Page 3
Main Characteristics Maximum Collector Dissipation Curve 150 100 Ambient Temperature Ta (°C) Typical Transfer Characteristics 100 Ta = 75° Pulse Test 0.1 0.01 0 0.2 0.4 Base to Emitter ...
Page 4
Rev.3.00 Aug 10, 2005 page Collector Output Capacitance vs. Collector to Base Voltage 100 MHz 1.0 0.1 0.1 1.0 10 Collector to Base Voltage V CB 100 (V) ...
Page 5
... A-A Section Ordering Information Part Name 2SC4702XV-TR-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK(T) / MPAK(T)V, 0.011g ...
Page 6
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...